Valence-skipping controlled

Superconductivity in Ge1-xInxTe

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results reveal the existence of a critical doping concentration xc=0.12 in Ge1-xInxTe, where various properties, including structure, resistivity, charge carrier type, and the density of states, take either an extremum or change their character. At the same time, we find indications of a change in the In-valence state from In3+ to In1+ with increasing x by core-level photoemission spectroscopy, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on structural, electronic, and thermodynamic properties of their host.

Variation of physical quantities in Ge1xInxTe. (a) Pseudocubic unit-cell volume for rhombohedral ( x<0.12) and cubic structure ( x>0.12) at 300 K. (b) Zero-field resistivity at 300 K (red open symbols) and at low T (blue filled symbols; at 2 K for x0.25 and above Tc for larger x). (c) Charge-carrier concentration n at 300 K. Note that n for x0.25 (dashed-dotted vertical line) are multiplied by 0.1 for clarity. (d) Superconducting Tc as estimated from resistivity, specific heat, and magnetization. The error bars for data points below x=0.16 indicate that these samples do not superconduct down to approx. 400 mK. (e) Normal-state electronic specific-heat coefficients γn. (f) Electron-phonon coupling strength deduced from specific-heat data. Dotted lines are guides to the eyes, solid horizontal lines in (c)–(e) indicate baselines, and the dashed vertical lines denote xc=0.12.

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